A precise MOSFET model for low-voltage circuits

1 June 1974

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 21 (6) , 363-371
https://doi.org/10.1109/t-ed.1974.17929

Abstract

A MOSFET model that is capable of handling the drain current above 10^-10A within the temperature range of 220-340 K is proposed. The key feature of the model is that surface potentials at source and pinchoff points are used for the purpose of obtaining a smooth connection between the current solutions in the tail and the saturation regions. Comparison of the model with experiments has been carried out using n-channel MOSFET's with 7 × 10¹³, 7 × 10¹⁴, and 4 × 10¹⁵cm^-3substrate impurity concentration and 675-, 1470-, and 5030-Å gate-oxide thickness. The theoretical calculations are in excellent agreement with the experimental measurements. It is shown that low-level current has a strong influence on the low-voltage static inverter circuit and dynamic memory.

Keywords

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