Infrared Luminescence from MOCVD Gan
- 1 January 1994
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer LayersJapanese Journal of Applied Physics, 1991
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)Japanese Journal of Applied Physics, 1989
- Relation between electron localization properties and infrared quenching of photoconductivity in hydrogenated amorphous siliconPhysical Review B, 1988
- Properties of Gallium NitrideMRS Proceedings, 1987
- Mechanism of Yellow Luminescence in GaNJapanese Journal of Applied Physics, 1980
- Photoluminescence of ion-implanted GaNJournal of Applied Physics, 1976
- Low-voltage blue electroluminescence in GaNIEEE Transactions on Electron Devices, 1975
- Luminescent properties of GaNSolid State Communications, 1970