Ion mass influence on transient enhanced diffusion and boron clustering in silicon: Deviation from the “+1” model
- 1 June 1998
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 83 (11) , 6182-6184
- https://doi.org/10.1063/1.367489
Abstract
Boron in silicon doping superlattices is used to trace native point defect behavior during a 790 °C, 15 min anneal following a 200 keV, 1×1013/cm2 Pb+ or 40 keV 1×1013/cm2 Si+ implant. These nonamorphizing implants lead to transient enhanced diffusion and clustering of the boron doping spikes. The enhancement in B diffusion scales sublinearly with mass of the ion implant. Clustering of the boron occurs deeper and more extensively in the Pb+-implanted sample due to greater mass of the ion. Measurement of the number of interstitials bound by extended defects after an 800 °C/10 s rapid thermal anneal confirm that the Pb+ implant has “+4.5” of the implant dose bound by extended defects, compared to “+0.6” in the Si+ implant for the same anneal. Both of these results indicate that the “+1” model is not valid for heavy mass ion implants.This publication has 12 references indexed in Scilit:
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