Determination of Si self-interstitial diffusivities from the oxidation-enhanced diffusion in B doping-superlattices: The influence of the marker layers
- 1 March 1995
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 77 (5) , 1948-1951
- https://doi.org/10.1063/1.358828
Abstract
Si self-interstitial diffusivities can be extracted from the diffusive behavior of certain metals (e.g., Au) in an inert annealing ambient or from the diffusion of dopant markers (typically B) under oxidizing conditions. Each type of experiment yields fairly consistent results; however, interstitial diffusivities obtained in these two ways differ greatly. The marker layer experiments rely on the assumption that the presence of the dopant does not disturb the diffusion of the interstitials, and the validity of this assumption is explored. A model of interstitial diffusivity in the presence of B is developed, two extreme cases of the B-atom–interstitial interaction strength are considered, and the predictions of the model are compared with experiments of oxidation-enhanced diffusion in B doping-superlattices. From this comparison it is concluded that trapping of interstitials by B atoms in the markers cannot be responsible for the different values of the Si interstitial diffusivity reported in the literature. Further, it is shown that the presence of the dopant does not perturb the behavior of the Si self-interstitials in the doping-superlattices, i.e., the markers are ‘‘unobtrusive’’ probes of interstitial behavior.This publication has 20 references indexed in Scilit:
- Determination of silicon point defect properties from oxidation enhanced diffusion of buried layersApplied Physics Letters, 1993
- Oxidation enhanced diffusion in Si B-doping superlattices and Si self-interstitial diffusivitiesApplied Physics Letters, 1993
- Interstitial–Substitutional Diffusion Kinetics and Dislocation-Induced Trapping of Zinc in Plastically Deformed SiliconPhysica Status Solidi (a), 1993
- Characterization of epitaxial layers by the depth dependence of boron diffusivityApplied Physics Letters, 1992
- Gold and platinum diffusion: The key to the understanding of intrinsic point defect behavior in siliconApplied Physics A, 1992
- Model for bulk effects on Si interstitial diffusivity in siliconApplied Physics Letters, 1987
- Gettering of gold in silicon: A tool for understanding the properties of silicon interstitialsJournal of Applied Physics, 1987
- The Diffusivity of Self-Interstitials in SiliconMRS Proceedings, 1987
- Transient enhanced diffusion of dopants in silicon induced by implantation damageApplied Physics Letters, 1986
- Point defects, diffusion processes, and swirl defect formation in siliconApplied Physics A, 1985