Characterization of epitaxial layers by the depth dependence of boron diffusivity
- 28 September 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (13) , 1513-1515
- https://doi.org/10.1063/1.107533
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Positron beam defect profiling of silicon epitaxial layersJournal of Applied Physics, 1991
- Low-temperature chemical vapor deposition of epitaxial Si and SiGe layers at atmospheric pressureApplied Physics Letters, 1991
- Sharp boron spikes in silicon grown by fast gas switching chemical vapor depositionApplied Physics Letters, 1991
- Oxidation-enhanced diffusion of arsenic and phosphorus in near-intrinsic 〈100〉 siliconApplied Physics Letters, 1978