Sharp boron spikes in silicon grown by fast gas switching chemical vapor deposition
- 18 February 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (7) , 711-713
- https://doi.org/10.1063/1.104523
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- The measurement of surface boron on silicon wafers annealed in vacuum and gas ambientsThin Solid Films, 1989
- The Effect of the Asymmetric Vortex in Vertical VPE Reactors on Deposition NonuniformityJournal of the Electrochemical Society, 1989
- Plasma-enhanced chemical vapor deposition of i n s i t u doped epitaxial silicon at low temperatures. II. Boron dopingJournal of Applied Physics, 1989
- Materials Analysis with High Energy Ion Beams Part III: Elastic Recoil DetectionMRS Bulletin, 1987
- On the factors impairing the compositional transition abruptness in heterojunctions grown by vapour-phase epitaxyJournal of Crystal Growth, 1987
- Secondary ion mass spectrometry of hyper-abrupt doping transitions fabricated by limited reaction processingApplied Physics Letters, 1987
- Nonequilibrium boron doping effects in low-temperature epitaxial silicon filmsApplied Physics Letters, 1987
- Thin, highly doped layers of epitaxial silicon deposited by limited reaction processingApplied Physics Letters, 1986
- Growth of multiple thin layer structures in the GaAs-AlAs system using a novel VPE reactorJournal of Crystal Growth, 1984
- MOVPE Growth of Ga1-xAlxAs–GaAs Quantum Well HeterostructuresJapanese Journal of Applied Physics, 1982