Crystallography of SiP and SiAs Single Crystals and of SiP Precipitates in Si
- 1 December 1966
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 37 (13) , 4683-4687
- https://doi.org/10.1063/1.1708117
Abstract
Transmission electron microscope examinations of silicon single crystals, phosphorus-diffused at low temperatures from anodic oxide films as phosphorus sources, showed the presence of crystallographically oriented precipitate. X-ray and electron diffraction investigations of SiP and SiAs single crystals prepared by a vapor-growth method revealed the orthorhombic crystal structure of the as-grown compounds. Using these structure data, the precipitate in the diffused silicon could be identified by electron diffraction as SiP. The orientation relationship SiP-precipitate/Si-matrix was determined.This publication has 13 references indexed in Scilit:
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