Observation of Diffusion-Induced Dislocation Lines in Silicon through Optical Microscopy
- 1 August 1965
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 36 (8) , 2593-2594
- https://doi.org/10.1063/1.1714542
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Diffusion-Induced Imperfections in SiliconJournal of the Electrochemical Society, 1965
- Simultaneous Observation of Diffusion-Induced Dislocation Slip Patterns in Si With Electron Beam Scanning and Optical MeansJournal of Applied Physics, 1964
- Diffusion-Induced Dislocations in SiliconJournal of Applied Physics, 1964
- DIFFUSION-INDUCED DISLOCATION NETWORKS IN SiApplied Physics Letters, 1964
- MICROSCOPY OF INTERNAL CRYSTAL IMPERFECTIONS IN Si p-n JUNCTION DIODES BY USE OF ELECTRON BEAMSApplied Physics Letters, 1963
- X-Ray Observations of Diffusion-Induced Dislocations in SiliconJournal of Applied Physics, 1962
- Generation and Distribution of Dislocations by Solute DiffusionJournal of Applied Physics, 1961
- Slip Patterns on Boron-Doped Silicon SurfacesJournal of Applied Physics, 1961
- Evidence of Dislocation Jogs in Deformed SiliconJournal of Applied Physics, 1958