Evidence of Dislocation Jogs in Deformed Silicon

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Abstract
Trails extending from dislocations in plastically deformed silicon have been observed by decoration and also by an etching technique which develops channels on a {111} plane. The trails extending from screws tend to follow parallel directions; those from mixed edge and screw dislocations are generally not crystallographic. Cusps occur where the trails are joined to the dislocations. A type of work hardening is found wherein trails from one turn of a Frank‐Read spiral obstruct the motion of subsequent turns. Trails are sometimes segmented or zig‐zag and appear to be composed of small discrete sections. Reversal of the direction of motion of a dislocation when the applied stress is removed is indicated by inversion of cusps. The main features of these trails can be accounted for on the basis of nonconservative motion of jogs which inject vacancies or interstitial atoms into their paths.

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