Effect of Oxygen on Etch-Pit Formation in Silicon
- 1 December 1957
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 28 (12) , 1419-1423
- https://doi.org/10.1063/1.1722670
Abstract
The etching behavior of as-grown and heat-treated silicon crystals has been studied using an etching procedure developed by Dash. The rate of chemical etching of silicon was found to decrease with increased concentration of dissolved oxygen. This effect impedes the formation of etch-pits. To explain the observed etching behavior after heat treatment it is necessary to assume that the rate of chemical etching increases with increased amount of precipitated oxygen in pulled crystals.This publication has 8 references indexed in Scilit:
- Oxygen Content of Silicon Single CrystalsJournal of Applied Physics, 1957
- Diffusion of Oxygen in SiliconJournal of Applied Physics, 1957
- Electrical and Optical Properties of Heat-Treated SiliconPhysical Review B, 1957
- Dislocation Etch Pits in Silicon CrystalsJournal of Applied Physics, 1956
- Copper Precipitation on Dislocations in SiliconJournal of Applied Physics, 1956
- Infrared Absorption and Oxygen Content in Silicon and GermaniumPhysical Review B, 1956
- Resistivity changes in silicon single crystals induced by heat treatmentActa Metallurgica, 1955
- Growth of Germanium Single Crystals ContainingJunctionsPhysical Review B, 1951