Characterization of EL2 in GaAs wafers by scanning isothermal transient spectroscopy
- 1 January 1992
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 7 (1A) , A196-A201
- https://doi.org/10.1088/0268-1242/7/1a/038
Abstract
The authors have developed a novel scanning deep level transient spectroscopy system based on laser-excited junction capacitance or current transient measurements under isothermal conditions (scanning isothermal transient spectroscopy or SICTS). By applying the system to the measurement of deep levels in GaAs, they have successfully obtained precise information on the spatial distribution of EL2 in n-type GaAs wafers.Keywords
This publication has 9 references indexed in Scilit:
- Scanning Isothermal Current Transient Spectroscopy (SICTS) and Its Application to the Microscopic Distribution Measurement of Gap States in Hydrogenated Amorphous Silicon FilmsJapanese Journal of Applied Physics, 1989
- Energy levels of dangling-bond centres in a-Si:H studied by photocapadtance transient spectroscopyPhilosophical Magazine Letters, 1987
- Gap states in phosphorus-doped amorphous silicon studied by isothermal capacitance transient spectroscopyPhilosophical Magazine Part B, 1985
- Direct Trap-Density Analysis with Junction Capacitance Transient: Trap Density Spectroscopy (TDS)Japanese Journal of Applied Physics, 1985
- Optical assessment of the main electron trap in bulk semi-insulating GaAsApplied Physics Letters, 1981
- Deep-level optical spectroscopy in GaAsPhysical Review B, 1981
- Isothermal Capacitance Transient SpectroscopyJapanese Journal of Applied Physics, 1981
- Electron traps in bulk and epitaxial GaAs crystalsElectronics Letters, 1977
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974