Influence of cap layer thickness on optical quality in In0.2Ga0.8As/GaAs single quantum wells
- 18 July 1994
- journal article
- letter
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (3) , 336-337
- https://doi.org/10.1063/1.112363
Abstract
Influences of GaAs cap layer thickness on residual strain in partially relaxed, 25-nm-thick In0.2Ga0.8As/GaAs single quantum wells have been investigated by photoluminescence and photoreflectance at 77 K. It was found that the residual strain increased and the optical quality improved with increasing cap layer thickness. Therefore, both quantum well and cap layer thicknesses determine the optical quality in lattice-mismatched semiconductor heterostructures.Keywords
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