Single flux-quantum Josephson memory cell using a new threshold characteristic

1 December 1983

journal article
Published by AIP Publishing in Applied Physics Letters

Vol. 43 (11) , 1067-1069
https://doi.org/10.1063/1.94238

Abstract

A new single flux-quantum Josephson memory cell in which nondestructive readout (NDRO) operations can be realized with a simple circuit configuration is proposed. The memory cell utilizes a new type of threshold characteristics in an equivalent asymmetric dc superconducting quantum interference device (SQUID) consisting of a three-junction SQUID gate and a single junction. NDRO operation has been successfully demonstrated in an experimental memory circuit.

Keywords

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