A comparison study of Pd/In/Pd, Pd-In/Pd, and PdIn ohmic contacts to n-GaAs
- 31 January 1995
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 38 (1) , 89-94
- https://doi.org/10.1016/0038-1101(94)e0064-l
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- An investigation of the Pd-In-Ge nonspiking Ohmic contact to n-GaAs using transmission line measurement, Kelvin, and Cox and Strack structuresJournal of Applied Physics, 1991
- Stable and shallow PdIn ohmic contacts to n-GaAsApplied Physics Letters, 1990
- The temperature dependence of contact resistivity of the Ge/Pd and the Si/Pd nonalloyed contact scheme on n-GaAsJournal of Applied Physics, 1989
- Ohmic contacts to n-GaAs using In/Pd metallizationApplied Physics Letters, 1987
- Microstructure studies of AuNiGe Ohmic contacts to n-type GaAsJournal of Vacuum Science & Technology B, 1986
- In/Pt ohmic contacts to GaAsJournal of Applied Physics, 1985
- Non-alloyed ohmic contact to n-GaAs by solid phase epitaxyApplied Physics Letters, 1985
- Electron microscope studies of an alloyed Au/Ni/Au-Ge ohmic contact to GaAsJournal of Applied Physics, 1983
- Metal-semiconductor contacts for GaAs bulk effect devicesSolid-State Electronics, 1967
- The equilibrium diagram of the system gold-galliumJournal of the Less Common Metals, 1966