Studies on thin films of ZnSe on GaAs prepared by a chemical deposition method
- 14 May 1992
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 25 (5) , 862-864
- https://doi.org/10.1088/0022-3727/25/5/018
Abstract
Thin films of zinc selenide have been deposited for the first time by a simple technique known as the liquid-gas interface reaction technique. Deposited films were studied using X-ray diffraction, transmission electron microscopy and optical absorption. The films deposited at a higher bath temperature of 80 degrees C are polycrystalline in nature. The optical band gap is found to be 2.62 eV. The low angle X-ray diffraction shows that three phases, namely Ga2Se3, As2Se3 and Zn3As2, are formed after annealing ZnSe films on GaAs at different temperatures.Keywords
This publication has 9 references indexed in Scilit:
- Growth of High-Quality ZnSe Films by Low-Pressure Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1984
- The optoelectronic properties of donors in organo-metallic grown zinc selenidePhysica B+C, 1983
- Control of optoelectronic properties of ZnSe films grown on GaAs by VPEJournal of Crystal Growth, 1982
- The organometallic chemical vapour deposition of ZnS and ZnSe at atmospheric pressureJournal of Crystal Growth, 1982
- Photodeposition of Zn, Se, and ZnSe thin filmsApplied Physics Letters, 1982
- Pulsed XeCl laser annealing of ZnS:Mn thin filmsApplied Physics Letters, 1982
- Low-temperature formation of polycrystalline silicon films by molecular beam depositionJournal of Applied Physics, 1982
- Direct optically detected magnetic resonance observation of a copper centre associated with the green emission in ZnSeJournal of Physics C: Solid State Physics, 1981
- The luminescence of self-activated and copper-doped zinc selenideJournal of Luminescence, 1974