Decrease in Quasi Vacancy Formation Energy in the Study of Pair Diffusion Model of Group V Impurities in Silicon
- 1 December 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (12R) , 5523
- https://doi.org/10.1143/jjap.32.5523
Abstract
When the impurity concentration is high, every vacancy is under the influence of impurity atoms and the vacancy formation energy appears to decrease due to the interaction between a vacancy and two impurity atoms. Since the vacancy formation energy is defined under the condition of no influence of impurity, the decrease is called a decrease in quasi vacancy formation energy, showing that a vacancy is under the influence of impurity atoms.Keywords
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