Thermal equilibrium process in undoped hydrogenated amorphous silicon and silicon-carbon alloy films
- 22 February 1988
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (8) , 622-624
- https://doi.org/10.1063/1.99384
Abstract
We find the thermally induced defects in undoped hydrogenated amorphous silicon carbon (a‐Si1−xCx: H) by electron spin resonance and conductivity measurements. The equilibrium temperature (Te) determined from the annealing temperature‐dependent density of dangling bonds after fast cooling decreases with increasing C content, from 190 °C for hydrogenated amorphous silicon to 150 °C for a‐Si0.82C0.18: H. Possible microscopic mechanisms for the observed thermally induced defects in a‐Si1−xCx: H alloys are discussed.Keywords
This publication has 10 references indexed in Scilit:
- Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous siliconPhysical Review Letters, 1987
- Metastable paramagnetism in hydrogenated amorphous silicon: Evidence for a new class of defects in tetrahedrally bonded amorphous semiconductorsPhysical Review B, 1987
- Equilibrium temperature and related defects in intrinsic glow discharge amorphous siliconApplied Physics Letters, 1987
- Thermally and optically induced metastabilities in doped hydrogenated amorphous silicon: ESR studiesPhysical Review B, 1987
- Thermal-equilibrium processes in amorphous siliconPhysical Review B, 1987
- Thermal-Equilibrium Defect Processes in Hydrogenated Amorphous SiliconPhysical Review Letters, 1986
- Structure and Electronic States in Disordered SystemsPhysical Review Letters, 1986
- A chemical-bond approach to doping, compensation and photo-induced degradation in amorphous siliconApplied Physics A, 1986
- Intrinsic dangling-bond density in hydrogenated amorphous siliconPhysical Review B, 1985
- Defects in hydrogenated amorphous silicon-carbon alloy films prepared by glow discharge decomposition and sputteringJournal of Applied Physics, 1982