Sulfur doping of GaAs and GaInP grown by metalorganic molecular beam epitaxy using a hydrogen sulfide gaseous source
- 6 May 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (18) , 1973-1975
- https://doi.org/10.1063/1.105036
Abstract
No abstract availableKeywords
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