Dose rate effects on damage formation in ion-implanted gallium arsenide
- 1 July 1991
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 59-60, 1028-1031
- https://doi.org/10.1016/0168-583x(91)95757-5
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Dose rate effects on damage accumulation in Si+-implanted gallium arsenideApplied Physics Letters, 1991
- Silicon implantation into GaAs: Observations of dose rate dependent electrical activation and damageApplied Physics Letters, 1990
- Dose rate dependence of damage clustering during heavy ion irradiation in SiRadiation Effects, 1985
- The influence of dose rate and analysis procedures on measured damage in P+ ion implanted GaAsRadiation Effects, 1984
- High density cascade effectsRadiation Effects, 1981
- Flux, fluence and implantation temperature dependence of disorder produced by 40 keV N+ion irradiation of GaAsRadiation Effects, 1980
- Dose rate effects in indium implanted GaAsRadiation Effects, 1974
- The influence of boron on the clustering of radiation damage in graphitePhilosophical Magazine, 1969