Silicon implantation into GaAs: Observations of dose rate dependent electrical activation and damage
- 27 August 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (9) , 911-913
- https://doi.org/10.1063/1.103402
Abstract
The electrical activation of ion-implanted silicon in GaAs has been studied as a function of dose rate (i.e., ion-current density). For a fluence of 1014 cm−2, the Hall sheet carrier activation is shown to depend strongly on the dose rate at which the implant was carried out. Carrier concentrations of 7×1018 cm−3 were produced at a 50×10−9 A/cm2 ion-current density. The variation in electrical activation is believed to be the result of a dose rate dependence of the ion-induced damage of GaAs which can be clearly seen in Rutherford backscattering (RBS) channeling measurements of 1015 cm−2 implants.Keywords
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