Flux, fluence and implantation temperature dependence of disorder produced by 40 keV N+ion irradiation of GaAs
- 1 January 1980
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 52 (3-4) , 211-224
- https://doi.org/10.1080/00337578008210034
Abstract
Measurements of the lattice disorder and the depth distribution of disorder produced by 40 keV N+ ion irradiation of GaAs have been carried out before and after thermal annealing. The results show a significant dependence of lattice disorder on ion flux, ion fluence and implant temperature. A bimodal depth distribution of disorder was also observed under certain implantation conditions. The results suggest that point defect production processes in III-IV binary semiconductors (GaAs) are similar to those of Si, whilst the annealing behaviour of GaAs is rather complex and is strongly dependent on implant temperature.Keywords
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