Chlorine incorporation and electrical properties at silicon surfaces oxidized in trichloroethylene-oxygen
- 1 April 1979
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 58 (2) , 301-305
- https://doi.org/10.1016/0040-6090(79)90258-x
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Oxidation of Silicon in the Presence of Chlorine and Chlorine CompoundsJournal of the Electrochemical Society, 1978
- Ranges and standard deviations of implanted ionsApplied Physics A, 1978
- Sodium passivation in HCl oxide films on SiApplied Physics Letters, 1977
- Some Effects of “Trichloroethylene Oxidation” on the Characteristics of MOS DevicesJournal of the Electrochemical Society, 1975
- Properties of SiO2 Grown in the Presence of HCl or Cl2Journal of the Electrochemical Society, 1975