Optical properties of nickel (d9) in GaP and ZnSe
- 10 October 1981
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 14 (28) , 4141-4152
- https://doi.org/10.1088/0022-3719/14/28/015
Abstract
Photoionisation of nickel (d9) to the conduction band has a threshold 0.8 eV in GaP and 1.0 eV in ZnSe. The internal d shell transition gives a zero phonon line at 3261 cm-1 (0.404 eV) in ZnSe. Using photocapacitance methods sharp peaks are seen near the photoionisation thresholds; these do not appear in absorption measurements. The origin of these peaks is not understood.Keywords
This publication has 11 references indexed in Scilit:
- Donor-acceptor pairs in GaP and GaAs involving the deep nickel acceptorApplied Physics Letters, 1981
- Photoionisation of nickel in ZnS and ZnSeJournal of Physics C: Solid State Physics, 1980
- Photoluminescence excitation spectroscopy of 3d transition-metal ions in GaP and ZnSeJournal of Physics C: Solid State Physics, 1980
- Infrared quenching of photocapacitance in evaporated ZnS : Ag thin filmsJournal of Applied Physics, 1979
- Optical and EPR study of the nickel two-electron-trap state in GaPPhysical Review B, 1979
- Identification of deep centers in ZnSeJournal of Applied Physics, 1977
- Photocapacitance measurements of a nickel level in ZnSeJournal of Physics C: Solid State Physics, 1977
- Near infrared absorption of Ni2+in ZnO and ZnS: dynamic Jahn-Teller effect in the3T2stateJournal of Physics C: Solid State Physics, 1973
- Electron Paramagnetic Resonance ofandin ZnSePhysical Review B, 1969
- Infra-red Absorption in Gallium Phosphide-Gallium Arsenide Alloys I. Absorption in n-type MaterialProceedings of the Physical Society, 1963