Infrared quenching of photocapacitance in evaporated ZnS : Ag thin films
- 1 May 1979
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (5) , 3638-3643
- https://doi.org/10.1063/1.326314
Abstract
The deep centers in evaporated ZnS : Ag thin films have been characterized by observation of the infrared quenching of photocapacitance using Schottky barriers. The photoionization energy of holes for transitions from Ag centers to the valence band edge is determined to be 0.56 eV at 300 K. The spectral distribution of the photoionization cross section of holes is obtained theoretically. It has been found that the magnitude of the photocapacitance quenching depends linearly on the intensity of the infrared illumination in the low‐intensity range. The concentration profile of Ag impurities has been measured and is almost uniform throughout the depletion layer in the films.This publication has 37 references indexed in Scilit:
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