Examination of the nature of lattice matched III–V semiconductor interfaces using computer simulated molecular beam epitaxial growth II. AxB1-xC/BC interfaces
- 24 July 1987
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 84 (1) , 98-114
- https://doi.org/10.1016/0022-0248(87)90116-3
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Examination of the nature of lattice matched III–V semiconductor interfaces using computer simulated molecular beam epitaxial growth I. AC/BC interfacesJournal of Crystal Growth, 1987
- A combined computer simulation, RHEED intensity dynamics and photoluminescence study of the surface kinetics controlled interface formation in MBE grown GaAs/AlxGa1−xAs(100) quantum well structuresJournal of Crystal Growth, 1987
- Computer simulations of the role of group V molecular reactions at steps during molecular beam epitaxial growth of III-V semiconductorsJournal of Crystal Growth, 1987
- Growth kinetics of molecular beam epitaxially grown GaAs/Al0.3Ga0.7As (100) normal and inverted interfaces in thin single quantum well structures examined via photoluminescence studiesApplied Physics Letters, 1987
- Observation of kinetically controlled monolayer step height distribution at normal and inverted interfaces in ultrathin GaAs/AlxGa1−xAs quantum wellsApplied Physics Letters, 1986
- Role of Surface Molecular Reactions in Influencing the Growth Mechanism and the Nature of Nonequilibrium Surfaces: A Monte Carlo Study of Molecular-Beam EpitaxyPhysical Review Letters, 1986
- Implications of the configuration-dependent reactive incorporation growth process for the group V pressure and substrate temperature dependence of III-V molecular beam epitaxial growth and the dynamics of the reflection high-energy electron diffraction intensityApplied Physics Letters, 1985
- Monte-Carlo simulations of MBE growth of III–V semiconductors: The growth kinetics, mechanism, and consequences for the dynamics of RHEED intensityJournal of Vacuum Science & Technology B, 1985
- Interaction kinetics of As4 and Ga on {100} GaAs surfaces using a modulated molecular beam techniqueSurface Science, 1975
- Surface stoichiometry and structure of GaAsSurface Science, 1974