Improvement of electron emission efficiency and stability by surface application of molybdenum silicide onto gated poly-Si field emitters
- 1 May 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 19 (5) , 167-170
- https://doi.org/10.1109/55.669737
Abstract
As an approach to improve electron field emission and its stability, molybdenum (Mo) silicide formation on n/sup +/ polycrystalline silicon (poly-Si) emitters has been investigated. Mo silicide was produced by direct metallurgical reaction, namely, deposition of Mo and subsequent rapid thermal annealing. The surface morphologies and emission properties of Mo-silicided poly-Si (Mo-polycide) emitters have been examined and compared with those of poly-Si emitters. While anode current of 0.1 μA per tip could be obtained at the gate voltage of 82 V from poly-Si emitters, the same current level was measured at 72 V from Mo-polycide emitters. In addition, the application of Mo silicide onto poly-Si emitters reduced the emission current fluctuation considerably. These results show that the polycide emitters can have potential applications in vacuum microelectronics to obtain superior electron emission efficiency and stability.Keywords
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