High-purity 4H-SiC epitaxial growth by hot-wall chemical vapor deposition
- 30 April 2002
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 237-239, 1213-1218
- https://doi.org/10.1016/s0022-0248(01)02174-1
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
- New Energy and Industrial Technology Development Organization
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