Observation of mobility anisotropy of electrons on (110) silicon surfaces at low temperatures
- 16 March 1972
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 10 (1) , 153-160
- https://doi.org/10.1002/pssa.2210100117
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Mobility Anisotropy of Electrons in Inversion Layers on Oxidized Silicon SurfacesPhysical Review B, 1971
- Effect of the Crystal Orientation upon Electron Mobility at the Si-SiO2 InterfaceJapanese Journal of Applied Physics, 1969
- Capacitance Observations of Landau Levels in Surface QuantizationPhysical Review Letters, 1968
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967
- Surface conductance of cleaved germanium surfacesSurface Science, 1966
- Magneto-Oscillatory Conductance in Silicon SurfacesPhysical Review Letters, 1966
- Negative Field-Effect Mobility on (100) Si SurfacesPhysical Review Letters, 1966
- Surface mobility of holes in thermally oxidized silicon measured by the field effect and the hall effectSurface Science, 1964
- Transport properties of light and heavy holes in the space charge region of a clean and water covered (111) germanium surfaceSurface Science, 1964
- Surface transportSurface Science, 1964