Anomalous B penetration through ultrathin gate oxides during rapid thermal annealing
- 1 September 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 20 (9) , 466-469
- https://doi.org/10.1109/55.784454
Abstract
We have observed accelerated diffusion of B in ultrathin gate oxides during rapid thermal annealing (RTA) of the gate stack. Enhanced diffusion by 10-100 times over standard furnace annealing has been measured in SiO/sub 2/. The activation energy for B diffusion in SiO/sub 2/ during RTA is decreased by about 0.5 eV when compared to furnace annealing results. We propose a model that involves the capture of optically generated holes by diffusion defects which results in reduced B migration enthalpy through the modified defect, whose bonding has been weakened by the presence of captured positive charge. No similar optical radiation effect was observed when F was present in the oxide.Keywords
This publication has 11 references indexed in Scilit:
- Flat-band voltage shifts in p-MOS devices caused by carrier activation in p/sup +/-polycrystalline silicon and boron penetrationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Effects of gate depletion and boron penetration on matching of deep submicron CMOS transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A 0.10 μm gate length CMOS technology with 30 Å gate dielectric for 1.0 V-1.5 V applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Boron diffusion and penetration in ultrathin oxide with poly-Si gateIEEE Electron Device Letters, 1998
- Physical Models of Boron Diffusion in Ultrathin Gate OxidesJournal of the Electrochemical Society, 1997
- Thermal Budget for Fabricating a Dual Gate Deep-Submicron CMOS with Thin Pure Gate OxideJapanese Journal of Applied Physics, 1996
- Effect of fluorine on boron diffusion in thin silicon dioxides and oxynitrideJournal of Applied Physics, 1995
- Boron Diffusion Through Pure Silicon Oxide and Oxynitride Used for Metal‐Oxide‐Semiconductor DevicesJournal of the Electrochemical Society, 1993
- Theory of the peroxy-radical defect in-SiPhysical Review B, 1982
- Concentration Profiles of Diffused Dopants in SiliconPublished by Elsevier ,1981