Ultraviolet light-emitting diodes at 340 nm using quaternary AlInGaN multiple quantum wells
- 17 December 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 79 (25) , 4240-4242
- https://doi.org/10.1063/1.1425453
Abstract
An ultraviolet light-emitting diode with peak emission wavelength at 340 nm is reported. The active layers of the device were comprised of quaternary AlInGaN/AlInGaN multiple quantum wells, which were deposited over sapphire substrates using a pulsed atomic-layer epitaxy process that allows precise control of the composition and thickness. A comparative study of devices over sapphire and SiC substrates was done to determine the influence of the epilayer design on the performance parameters and the role of substrate absorption.Keywords
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