Study of Ga ion implantation damage and annealing effect in Sn-doped InP using Raman scattering

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Abstract
The damage of Sn‐doped InP by Ga ion implantation with fluences ranging from 1×1013 to 5×1014 cm−2 and annealing effects (150–650 °C) are investigated by means of Raman scattering. The shift and asymmetrical broadening of a longitudinal optical phonon peak and the appearance of transverse optical mode and disorder‐activated acoustic modes show that the damage effect by Ga ion implantation is very large, and the crystalline structure becomes amorphouslike at a fluence as low as 1×1014 cm−2. The damaged state is investigated in terms of the spatial correlation model and quantitatively estimated by comparing the Raman peaks for longitudinal optical and transverse acoustic phonon modes with the theoretical calculations. It is shown that the correlation lengths at 1×1013 cm−2 are 36 and 29 Å, respectively. This largely damaged structure is found to be recovered by annealing at as low as 250 °C.