The application of the ion microprobe analyser to the measurement of the distribution of boron ions implanted into silicon crystals
- 1 September 1972
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 5 (9) , 1654-1663
- https://doi.org/10.1088/0022-3727/5/9/321
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
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- Profiles of High Conductivity Shallow Layers in Silicon Produced by Boron Ion Implantation†International Journal of Electronics, 1967