Optical and electrical properties of InAlAs/AlAsSb type II quantum well structures grown by molecular beam epitaxy
- 1 June 1998
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 188 (1-4) , 328-331
- https://doi.org/10.1016/s0022-0248(98)00098-0
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
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- InGaAs/AWAsSb Heterostructures Lattice-Matched to InP GRown by Molecular Beam EpitaxyMRS Proceedings, 1990
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