InGaAs/AWAsSb Heterostructures Lattice-Matched to InP GRown by Molecular Beam Epitaxy
- 1 January 1990
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Conduction-band edge discontinuity of InGaAs/GaAsSb heterostructures lattice-matched to InP grown by molecular beam epitaxyJournal of Crystal Growth, 1989
- Characteristic impedances of microstrip and finline with uniaxial or biaxial anisotropic substratesElectronics Letters, 1988
- Growth and characterization of GaAs0.5Sb0.5 lattice-matched to InP by molecular beam epitaxyJournal of Crystal Growth, 1988
- A Pseudomorphic In0.53Ga0.47As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room TemperatureJapanese Journal of Applied Physics, 1987
- Molecular beam epitaxial growth and low-temperature optical characterization of GaAs0.5Sb0.5 on InPApplied Physics Letters, 1987
- Organometallic vapor phase epitaxial growth of GaAs0.5Sb0.5Applied Physics Letters, 1984
- Compositional dependence of band-gap energy and conduction-band effective mass of In1−x−yGaxAlyAs lattice matched to InPApplied Physics Letters, 1982
- A new method to control impact ionization rate ratio by spatial separation of avalanching carriers in multilayered heterostructuresApplied Physics Letters, 1982
- Calculation of energy band gaps in quaternary iii/v alloysJournal of Electronic Materials, 1981
- In1−xGaxAs-GaSb1−yAsy heterojunctions by molecular beam epitaxyApplied Physics Letters, 1977