Organometallic vapor phase epitaxial growth of GaAs0.5Sb0.5
- 1 April 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (7) , 677-679
- https://doi.org/10.1063/1.94874
Abstract
The pseudobinary III/V system GaAs1−ySby is well known to have a solid phase miscibility gap with a critical temperature of 751 °C. We have succeeded in growing epitaxial layers of GaAs0.5Sb0.5 lattice matched to InP at temperatures of 600 and 630 °C using the organometallic vapor phase epitaxy technique. The key requirement is a III/V ratio of greater than unity. This leads to the incorporation of all As and Sb reaching the interface and the ability to grow metastable alloys. The epitaxial GaAs0.5Sb0.5 layers have excellent surface morphology and efficient photoluminescence at a wavelength of 1.6 μm.Keywords
This publication has 12 references indexed in Scilit:
- Thermodynamic aspects of organometallic vapor phase epitaxyJournal of Crystal Growth, 1983
- AlxGa1−xAsySb1−y phase diagramJournal of Crystal Growth, 1983
- Liquid phase epitaxy of unstable alloys: Substrate-induced stabilization and connected effectsJournal of Vacuum Science & Technology B, 1983
- A review of recent research on the growth and physical properties of single crystal metastable elemental and alloy semiconductorsJournal of Vacuum Science & Technology B, 1983
- Spinodal decomposition and clustering in III/V alloysJournal of Electronic Materials, 1982
- Tunneling in the reverse dark current of GaAlAsSb avalanche photodiodesApplied Physics Letters, 1982
- O.M. v.p.e. growth of AlGaSb and AlGaAsSbElectronics Letters, 1980
- Miscibility gap in the GaAsy Sb1−y systemJournal of Electronic Materials, 1979
- GaAs1-xSbx(0.3<x<0.9) Grown by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1977
- The importance of lattice mismatch in the growth of GaxIn1−xP epitaxial crystalsJournal of Applied Physics, 1972