Conduction-band edge discontinuity of InGaAs/GaAsSb heterostructures lattice-matched to InP grown by molecular beam epitaxy
- 2 February 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 95 (1-4) , 363-366
- https://doi.org/10.1016/0022-0248(89)90419-3
Abstract
No abstract availableKeywords
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