Molecular beam epitaxial growth and low-temperature optical characterization of GaAs0.5Sb0.5 on InP
- 11 May 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (19) , 1364-1366
- https://doi.org/10.1063/1.97857
Abstract
GaAs1−xSbx nearly lattice matched to InP substrates has been grown by molecular beam epitaxy. For a given As and Sb flux, the GaSb mole fraction is shown to be sensitive to the Ga flux rate. Low‐temperature photoluminescence spectra exhibit a dominant emission line at 0.780–0.790 eV with a full width at half‐maximum as narrow as 7.6 meV, which is believed to be the narrowest obtained to date. Optical absorption measurements demonstrate that the band gap of this material is considerably smaller than predicted by the commonly accepted composition/band gap relation.Keywords
This publication has 10 references indexed in Scilit:
- Ordered structures in GaAs0.5Sb0.5 alloys grown by organometallic vapor phase epitaxyApplied Physics Letters, 1986
- OMVPE growth of the metastable III/V alloy GaAs0.5Sb0.5Journal of Electronic Materials, 1986
- Summary Abstract: GaAs1−ySby growth by molecular beam epitaxyJournal of Vacuum Science & Technology B, 1986
- GaAs/GaAs1−ySby strained-layer superlattices grown by molecular beam epitaxyApplied Physics Letters, 1985
- Raman and photoluminescence spectra of GaAs1−xSbxJournal of Applied Physics, 1985
- Molecular beam epitaxy of GaSb0.5As0.5 and AlxGa1−xSbyAs1−y lattice matched to InPApplied Physics Letters, 1985
- GaAs1−xSbx growth by OMVPEJournal of Electronic Materials, 1984
- Organometallic vapor phase epitaxial growth of GaAs0.5Sb0.5Applied Physics Letters, 1984
- Molecular-beam epitaxy (MBE) of In1−xGaxAs and GaSb1−yAsyApplied Physics Letters, 1977
- Growth and properties of liquid-phase epitaxial GaAs1−xSbxJournal of Applied Physics, 1977