InAlAs/AlAsSb Type II Multiple Quantum Well Layers Lattice-Matched to InP Grown by Molecular Beam Epitaxy
- 1 June 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (6B) , L757
- https://doi.org/10.1143/jjap.36.l757
Abstract
In0.52Al0.48As/AlAs0.56Sb0.44 type II multiple quantum well (MQW) layers lattice-matched to InP substrates were grown by molecular beam epitaxy (MBE). High quality InAlAs/AlAsSb MQW layers were obtained by controlling As/Sb beams precisely and optimizing the V/III ratio during growth. Below-gap light emission at 0.90–0.97 µ m was observed at 77 K, which arises from the recombination between electrons in the InAlAs layers and holes in the AlAsSb layers across the type II heterointerface. The valence band discontinuity ΔE v is estimated to be 0.28 eV from the InAlAs well width dependence of the emission energy.Keywords
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