Technique for the Measurement of Short Carrier Lifetimes
- 1 December 1962
- journal article
- research article
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 33 (12) , 1331-1334
- https://doi.org/10.1063/1.1717771
Abstract
The phase shift method for the measurement of semiconductor carrier lifetime has been extended by the use of a light beam modulated at frequencies up to 4 Mc with a Kerr cell, to provide direct measurement of lifetimes down to at least 10−8 sec. Some typical results for the temperature variation of lifetime in indium antimonide are presented.Keywords
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