Stabilizing dielectric constant of fluorine-doped SiO2 film by N2O and NH3 plasma post-treatment
- 1 October 1997
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 308-309, 501-506
- https://doi.org/10.1016/s0040-6090(97)00482-3
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Fluorine Doped SiO2 for Low Dielectric Constant Films in Sub-Half Micron ULSI Multilevel InterconnectionPublished by Japan Society of Applied Physics ,1995
- Low Dielectric Constant Interlayer Using Fluorine-Doped Silicon OxideJapanese Journal of Applied Physics, 1994
- Flow Characteristics of SiOF Films in Room Temperature Chemical Vapor Deposition Utilizing Fluoro‐Trialkoxy‐Silane Group and Pure Water as Gas SourcesJournal of the Electrochemical Society, 1993