Counterdoping of MOS channel (CDC)-a new technique of improving suppression of latching in insulated gate bipolar transistors
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (1) , 29-31
- https://doi.org/10.1109/55.20403
Abstract
A novel technique of improving suppression of latching in insulated-gate bipolar transistors (IGBTs) is proposed and experimentally verified. By counterdoping the channel of the DMOS cell, the doping of the p-base can be increased up to a factor of two. Dynamic latching improvement of 40-80%, corresponding to the p-base doping increase, has been obtained. The degradation in forward blocking voltage was observed when the counterdoping dosage exceeds about 2*10/sup 12/ cm/sup -2/ for 600-V devices.Keywords
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