Hydrogenated amorphous-silicon thin films produced by ion plating
- 1 June 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (11) , 909-910
- https://doi.org/10.1063/1.91363
Abstract
Ion plating techniques have been used to produce amorphous‐silicon thin films which contain up to 25 atomic percent hydrogen. The Si–H bond stretching mode observed for hydrogenated amorphous‐silicon thin films produced by glow‐discharge decomposition methods is also observed for these ion‐plated films. Optical absorptivity measurements for ion‐plated films give band‐gap values between 1.58 and 1.90 eV.Keywords
This publication has 7 references indexed in Scilit:
- Infrared vibrational spectra of rf-sputtered hydrogenated amorphous siliconPhysical Review B, 1978
- Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputteringPhysical Review B, 1977
- Preparation of highly photoconductive amorphous silicon by rf sputteringSolid State Communications, 1977
- Doping, Schottky barrier and pn junction formation in amorphous germanium and silicon by rf sputteringSolid State Communications, 1976
- Amorphous silicon solar cellApplied Physics Letters, 1976
- Structural, Optical, and Electrical Properties of Amorphous Silicon FilmsPhysical Review B, 1970
- The Preparation and Properties of Amorphous SiliconJournal of the Electrochemical Society, 1969