MOSFET dosimetry of an X-ray microbeam
- 1 December 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 46 (6) , 1774-1780
- https://doi.org/10.1109/23.819153
Abstract
A metal-oxide-semiconductor field effect transistor (MOSFET) has been used as a radiation monitor to map the profile of a variety of X-ray radiation microbeams. The present work studies the role of the topology of the MOSFET gate oxide when mapping radiation microbeams. The "edge-on" MOSFET has been introduced for microbeam mapping and the spatial resolution of the "edge-on" MOSFET is investigated. Comparison is made with other mapping techniques including, Gafchromic/sup TM/ film, radiographic film, ionization chamber. The results clearly demonstrate the superiority of the "edge-on" MOSFET when applied to mapping of narrow radiation beams. The spatial resolution of the "edge-on" MOSFET is estimated to be 1 /spl mu/m and appears to be limited by the width of the gate oxide thickness.Keywords
This publication has 21 references indexed in Scilit:
- Dose response of various radiation detectors to synchrotron radiationPhysics in Medicine & Biology, 1998
- Radiochromic film dosimetry: Recommendations of AAPM Radiation Therapy Committee Task Group 55Medical Physics, 1998
- Calculation of microplanar beam dose profiles in a tissue/lung/tissue phantomPhysics in Medicine & Biology, 1998
- Simultaneous macro and micro dosimetry with MOSFETsIEEE Transactions on Nuclear Science, 1996
- Effects of package geometry, materials, and die design on energy dependence of pMOS dosimetersIEEE Transactions on Nuclear Science, 1995
- A miniature MOSFET radiation dosimeter probeMedical Physics, 1994
- Sensitometry of the response of a new radiochromic film dosimeter to gamma radiation and electron beamsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1991
- MOS Structure for Emergency Gamma and Proton DosimetryRadiation Protection Dosimetry, 1990
- RADFET: A review of the use of metal-oxide-silicon devices as integrating dosimetersInternational Journal of Radiation Applications and Instrumentation. Part C. Radiation Physics and Chemistry, 1986
- The Response of MOS Devices to Dose-Enhanced Low-Energy RadiationIEEE Transactions on Nuclear Science, 1986