Temperature and frequency dependence of the capacitance of heavily irradiated silicon diodes
- 1 November 1998
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 42 (11) , 2093-2096
- https://doi.org/10.1016/s0038-1101(98)00186-5
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- A comparative study of heavily irradiated silicon and non irradiated SI LEC GaAs detectorsIEEE Transactions on Nuclear Science, 1998
- Radiation damage on silicon after very high neutron fluence irradiationNuclear Physics B - Proceedings Supplements, 1998
- Hall effect measurements on proton-irradiated ROSE samplesNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1997
- Microscopic analysis of defects in a high resistivity silicon detector irradiated to 1.7/spl times/10/sup 15/ n/cm/sup 2/IEEE Transactions on Nuclear Science, 1996
- TSC data-analysis on heavily irradiated silicon detectorsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1995
- Determination of the Fermi level position for neutron irradiated high resistivity silicon detectors and materials using the transient charge technique (TChT)IEEE Transactions on Nuclear Science, 1994
- Affiliate plan of the IEEE Nuclear and Plasma Sciences SocietyIEEE Transactions on Nuclear Science, 1994
- Interstitial defect reactions in siliconApplied Physics Letters, 1987
- Effects of deep impurities on n+p junction reverse-biased small-signal capacitanceSolid-State Electronics, 1968
- Frequency dependence of the reverse-biased capacitance of gold-doped silicon P+N step junctionsIEEE Transactions on Electron Devices, 1964