Epitaxial lift-off of thin InAs layers
- 1 June 1995
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 24 (6) , 757-760
- https://doi.org/10.1007/bf02659736
Abstract
No abstract availableKeywords
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- Double heterostructure GaAs/AlGaAs thin film diode lasers on glass substratesIEEE Photonics Technology Letters, 1989
- Extreme selectivity in the lift-off of epitaxial GaAs filmsApplied Physics Letters, 1987