Si/SiGe high-speed field-effect transistors
- 19 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 509-512
- https://doi.org/10.1109/iedm.1995.499249
Abstract
We review the current status of Si/SiGe n- and p-type MODFETs with an emphasis on their microwave performance. A comparison with state-of-the-art Si technology is given, and the potential use of Si/SiGe devices in complementary logic is pointed out.Keywords
This publication has 6 references indexed in Scilit:
- High performance 0.1 μm CMOS devices with 1.5 V power supplyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Room temperature 0.1 μm CMOS technology with 11.8 ps gate delayPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- CMOS scaling in the 0.1-µm, 1.X-volt regime for high-performance applicationsIBM Journal of Research and Development, 1995
- High hole mobility in SiGe alloys for device applicationsApplied Physics Letters, 1994
- Electron transport properties of Si/SiGe heterostructures: Measurements and device implicationsApplied Physics Letters, 1993
- High-performance 0.10- mu m CMOS devices operating at room temperatureIEEE Electron Device Letters, 1993