Dynamics of excitons localized by stacking disorder in GaSe

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Abstract
The dynamics of the excitons localized by stacking disorder in the layered compound GaSe is investigated in the picosecond time domain by measuring energy- and time-resolved luminescence spectra at 1.6 K. The observed energy relaxation rate is much slower than expected from two-dimensional kinetic-energy-loss theory. We present a simple theory of energy transfer of the localized excitons which explains satisfactorily the experimental time response of the excitons. The observed slow relaxation is interpreted in terms of one-phonon-assisted transfer of localized excitons between layers.