Assessment of quantum yield experiments via full band Monte Carlo simulations
- 23 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 873-876
- https://doi.org/10.1109/iedm.1997.650519
Abstract
In this paper we present an in-depth analysis of Quantum Yield (QY) data by means of Full Band Monte Carlo (FBMC) simulation including data from stressed oxides. The effect of device structure and initial energy distribution on QY efficiency is explored and the consequences of oxide stress on QY data are analyzed. In particular, we show that: (a) there is universal shape for QY curves in fresh oxides independent of oxide thickness and substrate doping; (b) QY data can be used to gain important insight into possible Stress Induced Leakage Current (SILC) mechanisms and discriminate between different SILC models.Keywords
This publication has 7 references indexed in Scilit:
- Experimental evidence of inelastic tunneling and new I-V model for stress-induced leakage currentPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A quantitative analysis of time-decay reproducible stress-induced leakage current in SiO/sub 2/ filmsIEEE Transactions on Electron Devices, 1997
- Mechanism of stress-induced leakage current in MOS capacitorsIEEE Transactions on Electron Devices, 1997
- Model based on trap-assisted tunneling for two-level current fluctuations in submicrometer metal–silicon-dioxide–silicon diodesPhysical Review B, 1990
- Coupled Monte Carlo-drift diffusion analysis of hot-electron effects in MOSFETsIEEE Transactions on Electron Devices, 1989
- Quantum yield of electron impact ionization in siliconJournal of Applied Physics, 1985
- Scattering by ionization and phonon emission in semiconductorsPhysical Review B, 1980