Experimental evidence of inelastic tunneling and new I-V model for stress-induced leakage current
- 24 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 323-326
- https://doi.org/10.1109/iedm.1996.553594
Abstract
In this study, we propose a new experimental technique to study the transport properties of stress-induced leakage current (SILC), where the energy of electrons in SILC can be evaluated directly, utilizing the carrier separation measurement. It is found that electrons in SILC lose the energy by around 1.5 eV during tunneling through gate oxides. It is demonstrated that a new carrier transport model including the large energy relaxation describes the experimental I-V characteristics of SILC successfully.Keywords
This publication has 7 references indexed in Scilit:
- A quantitative analysis of stress induced excess current (SIEC) in SiO/sub 2/ filmsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1996
- Trapped hole enhanced stress induced leakage currents in NAND EEPROM tunnel oxidesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1996
- Stress-induced leakage current in ultrathin SiO2 filmsApplied Physics Letters, 1994
- Oxygen vacancy and thecenter in crystallinePhysical Review B, 1987
- Quantum yield of electron impact ionization in siliconJournal of Applied Physics, 1985
- Observation of positively charged state generation near the Si/SiO2 interface during Fowler–Nordheim tunnelingJournal of Vacuum Science and Technology, 1982
- Tunneling in a finite superlatticeApplied Physics Letters, 1973