A quantitative analysis of stress induced excess current (SIEC) in SiO/sub 2/ films
- 1 January 1996
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
The low-level stress induced excess current (SIEC) characteristics of 92 /spl Aring/ wet oxide are investigated in detail. As a result of the systematic investigations of the low-level E-J characteristics and the corresponding changes of net oxide charge, we have found that SIEC can be interpreted as electron tunneling processes into five kinds of different traps. As for the reproducible SIEC components, a quantitative analysis has been developed. By precisely modeling the trap assisted tunneling process, it has been shown that the E-J and t-J characteristics of the pretunneling region can be completely simulated as an electron tunneling process into the neutral trap. Using this analysis, it has been found that the local neutral trap density in bulk SiO/sub 2/ remains constant under the same hole fluence Qhole, regardless of the electric field strength during V/sub g/>0 FN stresses. In consequence, it has been concluded that the neutral trap has been created by holes injected into the oxide during the stresses.Keywords
This publication has 11 references indexed in Scilit:
- Interface state generation due to electron tunneling into thin oxidesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Stress induced leakage current limiting to scale down EEPROM tunnel oxide thicknessPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Electron traps and excess current induced by hot-hole injection into thin SiO2 filmsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1995
- Properties of high voltage stress generated traps in thin silicon oxidesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1995
- Stress-induced leakage current in ultrathin SiO2 filmsApplied Physics Letters, 1994
- High field emission related thin oxide wearout and breakdownPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1994
- Stress-induced current in thin silicon dioxide filmsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1992
- Neutral electron trap generation in SiO2 by hot holesApplied Physics Letters, 1990
- High-field-induced degradation in ultra-thin SiO/sub 2/ filmsIEEE Transactions on Electron Devices, 1988
- Substrate hole current and oxide breakdownApplied Physics Letters, 1986